STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

Κωδικός Προϊόντος της RS: 103-1986Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW11NM80
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Transistor Material

Si

Height

20.15mm

Minimum Operating Temperature

-65 °C

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 128,40

€ 4,28 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 159,22

€ 5,307 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

€ 128,40

€ 4,28 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 159,22

€ 5,307 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Transistor Material

Si

Height

20.15mm

Minimum Operating Temperature

-65 °C

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more