N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 104,40
€ 3,48 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 129,46
€ 4,315 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 104,40
€ 3,48 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 129,46
€ 4,315 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 30 - 60 | € 3,48 | € 104,40 |
| 90 - 480 | € 2,97 | € 89,10 |
| 510 - 960 | € 2,67 | € 80,10 |
| 990 - 4980 | € 2,52 | € 75,60 |
| 5010+ | € 2,14 | € 64,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products