STMicroelectronics FDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND

Κωδικός Προϊόντος της RS: 760-9792PΚατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW34NM60ND
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

80.4 nC @ 10 V

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 20,26

€ 10,13 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25,12

€ 12,56 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

STMicroelectronics FDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND
Επιλέγξτε συσκευασία

€ 20,26

€ 10,13 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25,12

€ 12,56 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

STMicroelectronics FDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

80.4 nC @ 10 V

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more