STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin TO-247 STW3N150

Κωδικός Προϊόντος της RS: 761-0320Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW3N150
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 6,53

€ 6,53 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,10

€ 8,10 Μονάδας Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin TO-247 STW3N150
Επιλέγξτε συσκευασία

€ 6,53

€ 6,53 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,10

€ 8,10 Μονάδας Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin TO-247 STW3N150

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 6,53
5 - 9€ 6,29
10 - 24€ 5,74
25 - 49€ 5,22
50+€ 5,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more