STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-247 STW5NK100Z
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 27.48
€ 6.87 Each (Supplied in a Tube) (Exc. Vat)
€ 34.08
€ 8.519 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
€ 27.48
€ 6.87 Each (Supplied in a Tube) (Exc. Vat)
€ 34.08
€ 8.519 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products