N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STMicroelectronics STW70N60DM2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
121 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Λεπτομέρειες Προϊόντος
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 17,09
€ 17,09 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 21,19
€ 21,19 Μονάδας Με Φ.Π.Α
Standard
1
€ 17,09
€ 17,09 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 21,19
€ 21,19 Μονάδας Με Φ.Π.Α
Standard
1
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 9 | € 17,09 |
| 10 - 99 | € 14,95 |
| 100 - 499 | € 14,04 |
| 500+ | € 13,91 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
121 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Λεπτομέρειες Προϊόντος
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products