STMicroelectronics ST SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

Κωδικός Προϊόντος της RS: 202-5547Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW70N65DM6
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

650 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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€ 16,76

€ 16,76 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,78

€ 20,78 Μονάδας Με Φ.Π.Α

STMicroelectronics ST SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6
Επιλέγξτε συσκευασία

€ 16,76

€ 16,76 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,78

€ 20,78 Μονάδας Με Φ.Π.Α

STMicroelectronics ST SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 16,76
5 - 9€ 14,67
10+€ 13,94

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

650 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more