STMicroelectronics TIP122 1 Darlington Transistor NPN, 5 A 100 V HFE:1000, 3-Pin TO-220
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
1000
Maximum Power Dissipation Pd
65W
Transistor Polarity
NPN
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Collector Base Voltage VCBO
100V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
TIP122
Maximum Collector Cut-off Current
0.2mA
Automotive Standard
No
Λεπτομέρειες Προϊόντος
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.
The TIP122 devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
50
P.O.A.
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
1000
Maximum Power Dissipation Pd
65W
Transistor Polarity
NPN
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Collector Base Voltage VCBO
100V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
TIP122
Maximum Collector Cut-off Current
0.2mA
Automotive Standard
No
Λεπτομέρειες Προϊόντος
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.
The TIP122 devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products