Taiwan Semi N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK TSM230N06CP ROG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1V
Height
2.3mm
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€ 21,50
€ 0,86 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 26,66
€ 1,066 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α
Standard
25
€ 21,50
€ 0,86 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 26,66
€ 1,066 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α
Standard
25
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1V
Height
2.3mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products