N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T

Κωδικός Προϊόντος της RS: 900-9955PΚατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD13383F4T
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maximum Operating Temperature

+150 °C

Width

1.04mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.35mm

Λεπτομέρειες Προϊόντος

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
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P.O.A.

N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maximum Operating Temperature

+150 °C

Width

1.04mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.35mm

Λεπτομέρειες Προϊόντος

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more