N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2

Κωδικός Προϊόντος της RS: 162-8525Κατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD16301Q2
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

0.8mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,33

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,409

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2

€ 0,33

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,409

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

0.8mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more