Texas Instruments NexFET Type N-Channel MOSFET, 5 A, 25 V Enhancement, 6-Pin SON

Κωδικός Προϊόντος της RS: 162-8525Κατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD16301Q2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

25V

Package Type

SON

Series

NexFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.3W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Width

2 mm

Height

0.8mm

Length

2mm

Standards/Approvals

No

Automotive Standard

No

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 870,00

€ 0,29 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.078,80

€ 0,36 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Texas Instruments NexFET Type N-Channel MOSFET, 5 A, 25 V Enhancement, 6-Pin SON

€ 870,00

€ 0,29 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.078,80

€ 0,36 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Texas Instruments NexFET Type N-Channel MOSFET, 5 A, 25 V Enhancement, 6-Pin SON

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

25V

Package Type

SON

Series

NexFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.3W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Width

2 mm

Height

0.8mm

Length

2mm

Standards/Approvals

No

Automotive Standard

No

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more