N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
250
P.O.A.
250
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products