N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS

Κωδικός Προϊόντος της RS: 827-4903Κατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD19506KCS
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 6,91

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,57

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Επιλέγξτε συσκευασία

€ 6,91

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,57

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 6,91
5 - 9€ 6,68
10 - 24€ 6,07
25 - 49€ 5,57
50+€ 5,37

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more