P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T

Κωδικός Προϊόντος της RS: 133-0156Κατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD25404Q3T
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Number of Elements per Chip

1

Width

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Λεπτομέρειες Προϊόντος

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,51

Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,872

Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Επιλέγξτε συσκευασία

€ 1,51

Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,872

Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 10€ 1,51€ 7,55
15 - 45€ 1,24€ 6,20
50 - 245€ 1,11€ 5,55
250 - 495€ 0,98€ 4,90
500+€ 0,88€ 4,40

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Number of Elements per Chip

1

Width

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Λεπτομέρειες Προϊόντος

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more