Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Width
0.6mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Λεπτομέρειες Προϊόντος
P-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Width
0.6mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Λεπτομέρειες Προϊόντος