Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Κωδικός Προϊόντος της RS: 890-2695Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: 2SK3565,S5Q(J
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Height

15mm

Forward Diode Voltage

1.7V

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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€ 12,25

€ 2,45 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 15,19

€ 3,038 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

€ 12,25

€ 2,45 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 15,19

€ 3,038 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 20€ 2,45€ 12,25
25 - 45€ 2,43€ 12,15
50 - 95€ 2,43€ 12,15
100 - 245€ 2,40€ 12,00
250+€ 2,40€ 12,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Height

15mm

Forward Diode Voltage

1.7V

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more