Toshiba 2SK N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 2SK4013,S5Q(J
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,60
€ 2,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,38
€ 2,877 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
5
€ 11,60
€ 2,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,38
€ 2,877 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 20 | € 2,32 | € 11,60 |
| 25 - 45 | € 1,83 | € 9,15 |
| 50+ | € 1,80 | € 9,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products