Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+175 °C
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 154,75
€ 6,19 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 191,89
€ 7,676 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
€ 154,75
€ 6,19 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 191,89
€ 7,676 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+175 °C
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products