Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Κωδικός Προϊόντος της RS: 144-5260Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: SSM3J334R,LF(T
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 6,90

€ 0,23 Μονάδας (Σε ένα πακέτο των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,56

€ 0,285 Μονάδας (Σε ένα πακέτο των 30) Με Φ.Π.Α

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

€ 6,90

€ 0,23 Μονάδας (Σε ένα πακέτο των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,56

€ 0,285 Μονάδας (Σε ένα πακέτο των 30) Με Φ.Π.Α

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
30 - 120€ 0,23€ 6,90
150+€ 0,23€ 6,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more