N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K333R

Κωδικός Προϊόντος της RS: 171-2399Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: SSM3K333R
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

3.4 nC @ 4.5 V

Height

0.8mm

Χώρα Προέλευσης

Thailand

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,15

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,186

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K333R

€ 0,15

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,186

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K333R
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
3000 - 3000€ 0,15€ 450,00
6000 - 6000€ 0,15€ 450,00
9000+€ 0,13€ 390,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

3.4 nC @ 4.5 V

Height

0.8mm

Χώρα Προέλευσης

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more