N-Channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723 Toshiba SSM3K37MFV,L3F(B

Κωδικός Προϊόντος της RS: 171-2404Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: SSM3K37MFV,L3F(B
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Χώρα Προέλευσης

Thailand

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,05

Μονάδας (Σε ένα καρούλι των 8000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,062

Μονάδας (Σε ένα καρούλι των 8000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723 Toshiba SSM3K37MFV,L3F(B

€ 0,05

Μονάδας (Σε ένα καρούλι των 8000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,062

Μονάδας (Σε ένα καρούλι των 8000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723 Toshiba SSM3K37MFV,L3F(B
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
8000 - 8000€ 0,05€ 400,00
16000+€ 0,05€ 400,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Χώρα Προέλευσης

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more