Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 Toshiba SSM6N43FU

Κωδικός Προϊόντος της RS: 171-2409Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: SSM6N43FU
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.52 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

200 mW

Maximum Gate Source Voltage

±10 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1.23 nC @ 4 V

Height

0.9mm

Χώρα Προέλευσης

Thailand

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 Toshiba SSM6N43FU

3000

Διατίθεται σε πολλαπλάσια από 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 Toshiba SSM6N43FU
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

3000

Διατίθεται σε πολλαπλάσια από 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.52 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

200 mW

Maximum Gate Source Voltage

±10 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1.23 nC @ 4 V

Height

0.9mm

Χώρα Προέλευσης

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more