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Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S

RS Stock No.: 827-6097Brand: ToshibaManufacturers Part No.: TK100A06N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

€ 16.48

€ 4.12 Each (In a Pack of 4) (Exc. Vat)

€ 20.44

€ 5.109 Each (In a Pack of 4) (inc. VAT)

Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S
Select packaging type

€ 16.48

€ 4.12 Each (In a Pack of 4) (Exc. Vat)

€ 20.44

€ 5.109 Each (In a Pack of 4) (inc. VAT)

Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
4 - 16€ 4.12€ 16.48
20 - 76€ 3.50€ 14.00
80 - 196€ 3.11€ 12.44
200 - 396€ 2.98€ 11.92
400+€ 2.95€ 11.80

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more