Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
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€ 9,65
€ 1,93 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 11,97
€ 2,393 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
5
€ 9,65
€ 1,93 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 11,97
€ 2,393 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 20 | € 1,93 | € 9,65 |
| 25 - 45 | € 1,78 | € 8,90 |
| 50 - 245 | € 1,72 | € 8,60 |
| 250 - 495 | € 1,67 | € 8,35 |
| 500+ | € 1,67 | € 8,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products