Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

Κωδικός Προϊόντος της RS: 133-2797Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK14G65W,RQ(S
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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€ 11,60

€ 2,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,38

€ 2,877 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

€ 11,60

€ 2,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,38

€ 2,877 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more