N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 7,80
€ 1,56 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,67
€ 1,934 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 7,80
€ 1,56 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,67
€ 1,934 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 20 | € 1,56 | € 7,80 |
| 25 - 45 | € 1,36 | € 6,80 |
| 50 - 245 | € 1,31 | € 6,55 |
| 250 - 495 | € 1,31 | € 6,55 |
| 500+ | € 1,29 | € 6,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products