Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
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€ 6,55
€ 1,31 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 8,12
€ 1,624 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 6,55
€ 1,31 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 8,12
€ 1,624 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 20 | € 1,31 | € 6,55 |
| 25 - 45 | € 1,12 | € 5,60 |
| 50 - 245 | € 1,10 | € 5,50 |
| 250 - 495 | € 1,10 | € 5,50 |
| 500+ | € 1,07 | € 5,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products