Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

Κωδικός Προϊόντος της RS: 125-0541Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK16E60W5,S1VX(S
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 9,25

€ 1,85 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,47

€ 2,294 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

€ 9,25

€ 1,85 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,47

€ 2,294 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 20€ 1,85€ 9,25
25 - 45€ 1,12€ 5,60
50 - 120€ 1,04€ 5,20
125+€ 1,04€ 5,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more