Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Κωδικός Προϊόντος της RS: 125-0551Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK20N60W5,S1VF(S
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 21,15

€ 4,23 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 26,23

€ 5,245 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

€ 21,15

€ 4,23 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 26,23

€ 5,245 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 20€ 4,23€ 21,15
25 - 45€ 3,89€ 19,45
50+€ 3,60€ 18,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more