Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

Κωδικός Προϊόντος της RS: 168-7968Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK31E60W,S1VX(S
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 261,00

€ 5,22 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 323,64

€ 6,473 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

€ 261,00

€ 5,22 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 323,64

€ 6,473 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 200€ 5,22€ 261,00
250 - 450€ 4,78€ 239,00
500+€ 4,44€ 222,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more