Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4,05
€ 4,05 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,02
€ 5,02 Μονάδας Με Φ.Π.Α
1
€ 4,05
€ 4,05 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,02
€ 5,02 Μονάδας Με Φ.Π.Α
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 9 | € 4,05 |
| 10 - 19 | € 2,69 |
| 20 - 39 | € 2,66 |
| 40 - 79 | € 2,64 |
| 80+ | € 2,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products