Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

Κωδικός Προϊόντος της RS: 168-7980Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK40E10N1,S1X(S
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

10.16mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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€ 66,50

€ 1,33 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 82,46

€ 1,649 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

€ 66,50

€ 1,33 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 82,46

€ 1,649 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 200€ 1,33€ 66,50
250 - 450€ 1,17€ 58,50
500 - 1200€ 1,15€ 57,50
1250+€ 1,15€ 57,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

10.16mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more