Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

Κωδικός Προϊόντος της RS: 168-7993Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK72A12N1,S4X(S
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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€ 138,50

€ 2,77 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 171,74

€ 3,435 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

€ 138,50

€ 2,77 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 171,74

€ 3,435 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 200€ 2,77€ 138,50
250 - 450€ 2,61€ 130,50
500+€ 2,58€ 129,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more