Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 109,75
€ 4,39 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 136,09
€ 5,444 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
€ 109,75
€ 4,39 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 136,09
€ 5,444 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products