Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

Κωδικός Προϊόντος της RS: 133-2809Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TPH11006NL,LQ(SDistrelec Article No.: 30409221
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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€ 10,00

€ 0,50 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,40

€ 0,62 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

€ 10,00

€ 0,50 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,40

€ 0,62 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more