N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

Κωδικός Προϊόντος της RS: 171-2206Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TPN14006NH,L1Q(M
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.1mm

Forward Diode Voltage

1.2V

Height

0.85mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,53

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,657

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

€ 0,53

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,657

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
5000 - 5000€ 0,53€ 2.650,00
10000+€ 0,48€ 2.400,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.1mm

Forward Diode Voltage

1.2V

Height

0.85mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more