Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,81
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,004
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
€ 0,81
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,004
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 20 | € 0,81 | € 8,10 |
| 30+ | € 0,71 | € 7,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products