Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Χώρα Προέλευσης
China
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€ 8,10
€ 0,81 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,04
€ 1,004 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 8,10
€ 0,81 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,04
€ 1,004 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 40 | € 0,81 | € 8,10 |
| 50 - 90 | € 0,73 | € 7,30 |
| 100 - 490 | € 0,70 | € 7,00 |
| 500 - 990 | € 0,68 | € 6,80 |
| 1000+ | € 0,60 | € 6,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products