N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Κωδικός Προϊόντος της RS: 178-3693Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SiS110DN-T1-GE3
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,40

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,496

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

€ 0,40

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,496

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more