Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Κωδικός Προϊόντος της RS: 178-3702Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SiZ348DT-T1-GE3
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-16 V, +20 V

Width

3mm

Length

3mm

Typical Gate Charge @ Vgs

12.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 1.560,00

€ 0,52 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.934,40

€ 0,645 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

€ 1.560,00

€ 0,52 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.934,40

€ 0,645 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-16 V, +20 V

Width

3mm

Length

3mm

Typical Gate Charge @ Vgs

12.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more