Vishay Siliconix TrenchFET P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70-6L SQA401EEJ-T1_GE3

Κωδικός Προϊόντος της RS: 178-3709Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SQA401EEJ-T1_GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

2.68 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

13.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

4.2 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

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€ 1.020,00

€ 0,34 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.264,80

€ 0,422 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70-6L SQA401EEJ-T1_GE3

€ 1.020,00

€ 0,34 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.264,80

€ 0,422 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70-6L SQA401EEJ-T1_GE3

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Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

2.68 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

13.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

4.2 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more