Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

Κωδικός Προϊόντος της RS: 178-3715Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SQD40031EL_GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2.820,00

€ 1,41 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.496,80

€ 1,748 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

€ 2.820,00

€ 1,41 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.496,80

€ 1,748 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more