Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3

Κωδικός Προϊόντος της RS: 178-3960Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SQD40061EL_GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Χώρα Προέλευσης

Taiwan, Province Of China

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€ 17,20

€ 1,72 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 21,33

€ 2,133 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Επιλέγξτε συσκευασία

€ 17,20

€ 1,72 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 21,33

€ 2,133 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 90€ 1,72€ 17,20
100 - 490€ 1,49€ 14,90
500 - 990€ 1,33€ 13,30
1000+€ 1,17€ 11,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Χώρα Προέλευσης

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more