Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3

Κωδικός Προϊόντος της RS: 178-3725Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SQM40022EM_GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

Taiwan, Province Of China

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€ 1.816,00

€ 2,27 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.251,84

€ 2,815 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α

Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3

€ 1.816,00

€ 2,27 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.251,84

€ 2,815 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α

Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more