Vishay N-Channel MOSFET, 3.3 A, 200 V, 3-Pin TO-220AB IRF610PBF

Κωδικός Προϊόντος της RS: 543-0046Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRF610PBFDistrelec Article No.: 17114986
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET Transistor, 3.3 A, 200 V, 3-Pin TO-220AB Fairchild IRF610
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,78

€ 0,78 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,97

€ 0,97 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 3.3 A, 200 V, 3-Pin TO-220AB IRF610PBF
Επιλέγξτε συσκευασία

€ 0,78

€ 0,78 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,97

€ 0,97 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 3.3 A, 200 V, 3-Pin TO-220AB IRF610PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 0,78
10 - 49€ 0,76
50 - 99€ 0,55
100 - 249€ 0,52
250+€ 0,50

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET Transistor, 3.3 A, 200 V, 3-Pin TO-220AB Fairchild IRF610
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET Transistor, 3.3 A, 200 V, 3-Pin TO-220AB Fairchild IRF610
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α