Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740LCPBF

Κωδικός Προϊόντος της RS: 536-5992PΚατασκευαστής: VishayΚωδικός Κατασκευαστή: IRF740LCPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 33,40

€ 3,34 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 41,42

€ 4,14 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740LCPBF
Επιλέγξτε συσκευασία

€ 33,40

€ 3,34 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 41,42

€ 4,14 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740LCPBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
10 - 49€ 3,34
50 - 99€ 3,29
100 - 249€ 3,11
250+€ 2,95

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more