Vishay N-Channel MOSFET, 8 A, 500 V, 3-Pin D2PAK IRF840ASPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 90,00
€ 1,80 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
€ 111,60
€ 2,232 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
50
€ 90,00
€ 1,80 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
€ 111,60
€ 2,232 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Ράγα)
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 120 | € 1,80 | € 9,00 |
| 125 - 245 | € 1,70 | € 8,50 |
| 250 - 495 | € 1,46 | € 7,30 |
| 500+ | € 1,31 | € 6,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products