P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF

Κωδικός Προϊόντος της RS: 145-1789Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRF9Z34PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.01mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,52

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,125

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF

€ 2,52

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,125

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 2,52€ 126,00
100 - 200€ 2,42€ 121,00
250+€ 2,34€ 117,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.01mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more