Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF

Κωδικός Προϊόντος της RS: 708-4755Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRF9Z34PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 13,55

€ 2,71 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,80

€ 3,36 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF
Επιλέγξτε συσκευασία

€ 13,55

€ 2,71 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,80

€ 3,36 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 45€ 2,71€ 13,55
50 - 120€ 2,48€ 12,40
125 - 245€ 2,24€ 11,20
250 - 495€ 2,14€ 10,70
500+€ 2,04€ 10,20

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more